bso065n03ms g opti mos ? 3 m-series power-mosfet features ? optimized for 5v driver application (notebook, vga, pol) ? low fom sw for high frequency smps ? 100% avalanche tested ? n-channel ? very low on-resistance r ds(on) @ v gs =4.5 v ? excellent gate charge x r ds(on) product (fom) ? qualified for consumer level application ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit 10 secs steady state continuous drain current 1) i d v gs =10 v, t a =25 c 16 13 a v gs =10 v, t a =90 c 10.9 8.6 v gs =4.5 v, t a =25 c 14.2 11 v gs =4.5 v, t a =90 c 9.8 7.8 pulsed drain current 2) i d,pulse t a =25 c avalanche current, single pulse 3) i as t a =25 c avalanche energy, single pulse e as i d =16 a, r gs =25 ? mj gate source voltage v gs v power dissipation 1) p tot t a =25 c 2.5 1.56 w operating and storage temperature t j , t stg c iec climatic category; din iec 68-1 55/150/56 value 112 16 60 20 -55 ... 150 type package marking bso065n03ms g pg-dso-8 065n03ms pg-dso-8 v ds 30 v r ds(on),max v gs =10 v 6.5 m ? v gs =4.5 v 8 i d 16 a product summary rev.1.1 page 1 2009-11-19
bso065n03ms g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - soldering point r thjs - - 35 k/w thermal resistance, junction - ambient r thja minimal footprint, t p 10 s - - 110 minimal footprint, steady state - - 150 6 cm 2 cooling area 1) , t p 10 s --50 6 cm 2 cooling area 1) , steady state --80 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 1-2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 10 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =16 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =14.2 a - 6.4 8 m ? v gs =10 v, i d =16 a - 5.4 6.5 gate resistance r g 0.6 1.3 2.3 ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =16 a 25 50 - s 3) see figure 13 for more detailed information values 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 2) see figure 3 for more detailed information rev.1.1 page 2 2009-11-19
bso065n03ms g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2300 3100 pf output capacitance c oss - 710 940 reverse transfer capacitance c rss -47- turn-on delay time t d(on) - 12.2 - ns rise time t r - 6.2 - turn-off delay time t d(off) - 15.6 - fall time t f - 6.4 - gate char g e characteristics 4) gate to source charge q gs - 6.4 - nc gate charge at threshold q g(th) - 3.7 - gate to drain charge q gd - 3.2 - switching charge q sw - 5.9 - gate charge total q g - 14.4 19 gate plateau voltage v plateau - 2.8 - v gate charge total q g v dd =15 v, i d =16 a, v gs =0 to 10 v -3040nc gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 4.5 v - 12.5 16.6 output charge q oss v dd =15 v, v gs =0 v - 18.4 25 reverse diode diode continuous forward current i s --3a diode pulse current i s,pulse - - 112 diode forward voltage v sd v gs =0 v, i f =16 a, t j =25 c - 0.84 1.1 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 12 nc 4) see figure 16 for gate charge parameter definition t a =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =4.5 v, i d =16 a, r g =1.6 ? v dd =15 v, i d =16 a, v gs =0 to 4.5 v rev.1.1 page 3 2009-11-19
bso065n03ms g 1 power dissipation 2 drain current p tot =f( t a ); t p 10 s i d =f( t a ); t p 10 s parameter: v gs 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c 2) ; d =0 z thja =f( t p ) 2) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms 100 ms 10 s 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 2 10 1 10 0 10 -1 t p [s] z thja [k/w] 0 0.5 1 1.5 2 2.5 3 0 40 80 120 160 t a [c] p tot [w] 10 v 4.5 v 0 2 4 6 8 10 12 14 16 0 40 80 120 160 t a [c] i d [a] rev.1.1 page 4 2009-11-19
bso065n03ms g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 2.8 v 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 i d [a] r ds(on) [m ? ] 25 c 150 c 0 20 40 60 80 100 120 012345 v gs [v] i d [a] 2.8 v 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 0 20 40 60 80 100 120 0123 v ds [v] i d [a] 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 i d [a] g fs [s] rev.1.1 page 5 2009-11-19
bso065n03ms g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =16 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 2 4 6 8 10 12 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 0102030 v ds [v] c [pf] 25 c 150 c 25 c, 98% 150 c, 98% 10 3 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] rev.1.1 page 6 2009-11-19
bso065n03ms g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =16 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 22 24 26 28 30 32 34 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 0.1 1 10 100 1 10 100 1000 t av [s] i av [a] 6 v 15 v 24 v 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 q gate [nc] v gs [v] rev.1.1 page 7 2009-11-19
bso065n03ms g package outline pg-dso-8: outline footprint dimensions in mm rev.1.1 page 8 2009-11-19
bso065n03ms g published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev.1.1 page 9 2009-11-19
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